Si/Mo结构烧结应力随烧结温度的变化

提出了一种新的低温烧结硅/钼结构的方法.根据热弹性理论和复合材料层间应力理论,分析了不同烧结温度下硅/钼结构的层间应力情况,并采用红外光弹系统测量了硅片中的应力分布.实验结果表明,硅片中的应力分布随烧结温度的不同而不同,应力随烧结温度的降低而减小.将实验结果与理论结果进行比较,发现两者吻合较好,从而验证了理论分析的正确性.

Variation of Sintering Stress in Si/Mo Structure with Sintering Temperature

A new method was first proposed to realize the low-temperature sintering of Si//Mo structure. Then,according to the theories of thermoelasticity and interlaminar stress of composites, the interlaminar stresses of the Si/Mo structure at different sintering temperatures were analyzed. Moreover, the stress distribution in the Si wafer was measured by using a infrared photoelastic system. Experimental results indicate that the stress distribution varies with the sintering temperature, and that the stress decreases with the sintering temperature. By the comparison between the experimental and theoretical results, good consistency is obtained, thus verifying the correctness of the theoretical analyses.