4H-SiC紫外光光电晶体管模拟与分析

根据光电晶体管的物理机理和SiC材料参数,建立了4H-SiC紫外光电晶体管的数值模型,利用Silvco软件对其I-V特性和光谱响应等特性进行了模拟与分析;通过研究4H-SiC紫外光电晶体管不同结构尺寸下的光谱响应特性,对其各区掺杂浓度与厚度等参数进行优化设计。结果表明,优化后的光电晶体管光谱响应范围为200～380 nm,峰值波长为270 nm,相应的响应度为300A/W,而对可见-红外光的响应度均小于2 A/W,具有较高的紫外光分辨率,可以实现在较强的红外及可见光背景下有效地进行紫外光探测。

Simulation and Analysis of 4H-SiC Ultraviolet Phototransistor

SiC is the ideal material for making UV(ultraviolet) photodetector.In the paper,a statistics model of 4H-SiC UV phototransistor is calculated and established based on the physical principle of phototransistor and the parameters of SiC.The software of Silvaco is employed to simulate and analyze its I-V characteristics and spectral response.In order to optimize the device structure of 4H-SiC UV phototransistor and its parameters,such as doping concentration and doping depth of the different areas,the spectral response under different structural dimension is simulated and analyzed.The results indicate that the spectral response of 4H-SiC UV phototransistor is in the range of 200~380 nm with a maximum responsibility of 300 A/W around 270 nm,while its responsibility in the range from visible light to infrared light is not over 2 A/W.That indicates that the device has a high resolving power for ultraviolet light.The 4H-SiC UV phototransistor can detect ultraviolet light effectively under the infrared and visible light.