| 阳极Ta/Ta2O5的薄膜曲界面结构特征及形成机理 |
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| 引用本文： | 石维,杨邦朝,张选红.阳极Ta/Ta2O5的薄膜曲界面结构特征及形成机理[J].四川大学学报(自然科学版),2016,53(2):409-412. |
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| 作者姓名： | 石维 杨邦朝 张选红 |
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| 作者单位： | 铜仁学院材料与化学工程学院;电子科技大学微电子与固体电子学院;中国振华（集团）新云电子元器件有限责任公司;中国振华（集团）新云电子元器件有限责任公司;中国振华（集团）新云电子元器件有限责任公司;中国振华（集团）新云电子元器件有限责任公司;中国振华（集团）新云电子元器件有限责任公司 |
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| 基金项目： | 贵州省教育厅125重大专项字[2013](027)；贵州省科技厅黔省专合字2012(06)支助项目 |
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| 摘 要： | 采用电化学方法制备了钽电解电容器阳极.通过场发射扫描电镜和理论分析对钽阳极断面的曲面结构特征及其形成机理进行了研究.研究结果发现Ta/Ta_2O_5的薄膜曲界面存在间隙层(1nm),该间隙层为氧空位及其缺陷离子迁移所致;曲面结构的应力模型表明曲面薄膜界面的电化学生长过程生产缺陷浓度高于平面系统,讨论了钽电解电容器曲面薄膜的形成过程对电场应力畸变屏蔽的机理.
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| 关 键 词： | 钽电解电容器 Ta2O5薄膜 微结构 电场畸变 曲面 |
| 收稿时间： | 2014/8/17 0:00:00 |
| 修稿时间： | 2014/11/11 0:00:00 |
Curve surface structure characteristics and forming mechanism of anode Ta/Ta2O5 film |
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| SHI Wei,YANG Bang-Chao and ZHANG Xuan-Hong.Curve surface structure characteristics and forming mechanism of anode Ta/Ta2O5 film[J].Journal of Sichuan University (Natural Science Edition),2016,53(2):409-412. |
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| Authors: | SHI Wei YANG Bang-Chao and ZHANG Xuan-Hong |
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| Institution: | Collge of materials and Chemistry, Tongren University,;School of Microelectronics and Solid state Electronics,University of Electronic Science and
Technology of China;Xinyun electronic co., LTD, Zhenhua Electronics Group;Xinyun electronic co., LTD, Zhenhua Electronics Group;Xinyun electronic co., LTD, Zhenhua Electronics Group;Xinyun electronic co., LTD, Zhenhua Electronics Group;Xinyun electronic co., LTD, Zhenhua Electronics Group |
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| Abstract: | Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism Tantalum electrolytic capacitor anode was prepared by electrochemical method. The surface structure characteristics and formation mechanism of tantalum anode section were studied by field emission scanning electron microscopy (SEM) and theoretical analysis. The results show that a gap layer (<1nm), caused by oxygen vacancy and its defect ion migration, is embedded in the Ta/Ta2O5 film curve surface. Moreover, surface film of the interface structure stress model shows that the defect concentration produced in the surface electrochemical growth process is higher than that of planar system. The mechanism of the electric field stress distortion shielding related to the formation process of the tantalum electrolytic capacitor film is discussed. |
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| Keywords: | Tantalum electrolytic capacitor Ta2O5 thin films Microstructure Electric field distortion Curved Surface |
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