| 射频共溅射SiC薄膜的制备和特性研究 |
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| 引用本文： | 刘雪芹 龚恒翔. 射频共溅射SiC薄膜的制备和特性研究[J]. 兰州大学学报(自然科学版), 1999, 35(4): 38-43 |
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| 作者姓名： | 刘雪芹 龚恒翔 |
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| 作者单位： | 兰州大学物理科学与技术学院!甘肃兰州730000 |
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| 基金项目： | 国家自然科学基金!（69676002） |
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| 摘 要： | 用射频共射复合靶技术和Ｎ２气保护下高温退火的后处理方法，在Ｓｉ衬底上制备出了碳化硅薄膜，通过傅里叶变换红外光谱、室温光致发光谱、电阻率－温度关系谱、Ｘ射线光电子谱等测量手段，研究了淀积膜和不同温度退火薄膜的结构、电学和光致发光等性质。
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| 关 键 词： | RF共溅射 碳化硅薄膜 制备 射频共溅射 半导体 |
Preparation and Properties of RF Co sputtered SiC Films |
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| Liu Xueqin,Gong Hengxiang,Yang Yinghu,Zhen Congmian,Jiang Gangjuan,Wang Yinyue. Preparation and Properties of RF Co sputtered SiC Films[J]. Journal of Lanzhou University(Natural Science), 1999, 35(4): 38-43 |
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| Authors: | Liu Xueqin Gong Hengxiang Yang Yinghu Zhen Congmian Jiang Gangjuan Wang Yinyue |
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| Abstract: | SiC films on Si substrates were obtained by RF co sputtering of the Si and C compound target and annealing at high temperatures in N 2 atmosphere. The structures, electrical properties and room temperature photoluminescence(PL) of as deposited films and those annealed at different temperatures were studied by Fourier transform infrared spectrum(FTIR), PL, the dependence of resistance and measurement temperature and X ray photoelectron spectroscopy(XPS) techniques. The properties of SiC films were good. As compared with RF sputtering of SiC alloy target, the RF co sputtering of the compound target technique was simpler and more economical. By proportioning Si to C in the compound target and high temperature annealing, the structures and properties of the SiC films were distinctly improved. |
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| Keywords: | SiC film RF co sputtering compound target |
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