| 高功率微波激励下p-n结器件响应 |
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| 引用本文： | 吴如军,郭杰荣,余稳.高功率微波激励下p-n结器件响应[J].湖南文理学院学报(自然科学版),2002,14(1):19-21. |
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| 作者姓名： | 吴如军 郭杰荣 余稳 |
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| 作者单位： | 湖南省医药中等专业学校 湖南长沙410042
(吴如军)，常德师院电子研究所 湖南常德415000
(郭杰荣)，西安电子科技大学微电子所 陕西西安710071(余稳) |
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| 基金项目： | 湖南省自然科学基金项目 ( 0 0JJY2 0 0 9)，常德师院科研基金 (JJ0 12 4) |
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| 摘 要： | 通过采用时域有限差分方法 (FDTD)和混合算法处理半导体器件所满足的刚性、耦合、非线性偏微分方程组 ,建立PN结半导体器件在高功率微波 (HightPowerMicrowave)激励下瞬态响应的一维模型 ,并在此基础上进行二极管功率耗散情况的分析和对微波信号响应截止频率的计算 ,从而对PN结半导体在高功率微波激励下的损伤机理进行研究 .计算表明 ,二极管功率耗散主要集中在源电压正半周峰值附近 ,器件的热击穿应发生在信号的正半周期内 ,10GHz应可视为该二极管对微波信号响应的截止频率
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| 关 键 词： | 高功率微波 一维瞬态过程模拟 时域有限差分方法 混合算法 |
| 文章编号： | 1009-3818(2002)01-0019-03 |
| 修稿时间： | 2001年11月22日 |
STUDY ON THE RESPONSE OF P-N JUNCTION FOR HIGHT POWER MICROWAVE ILLUMINATION |
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| WU Ru-jun,GUO Jie-rong,YU Wen.STUDY ON THE RESPONSE OF P-N JUNCTION FOR HIGHT POWER MICROWAVE ILLUMINATION[J].Journal of Hunan University of Arts and Science:Natural Science Edition,2002,14(1):19-21. |
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| Authors: | WU Ru-jun GUO Jie-rong YU Wen |
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| Institution: | WU Ru-jun 1 GUO Jie-rong 2 YU Wen 2,3 |
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| Abstract: | The Finite Difference Time Domain (FDTD) Method was used to line the semiconductor operation's equations, which were stiff, coupled, nonlinear and partial differential. Based on these, one-dimensional PN junction transient operation of semiconductor devices was set up, the power dissipation and the close frequency under HPM have been calculated, and then the mechanism of demagnification can be studied. From the result, the power dissipation mainly in the time of positive period,Which was the time of heat break down, 10GHz was the close frequency. |
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| Keywords: | high power microwave one-dimensional transient operation simulation Finite Difference Time Domain Method Hybrid algorithm |
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