| 等离子体氮化SiO2膜中电子陷阱的研究 |
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| 引用本文： | 吕世骥 蔡跃明. 等离子体氮化SiO2膜中电子陷阱的研究[J]. 东南大学学报(自然科学版), 1989, 19(2): 22-27 |
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| 作者姓名： | 吕世骥 蔡跃明 |
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| 作者单位： | 东南大学电子工程系，东南大学电子工程系，东南大学电子工程系 南京通讯工程学院 |
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| 摘 要： |
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| 关 键 词： | 氮化 SiO2 电介质膜 电子陷阱 |
The Research on Electron Trap in SiO_2 Film Nitrided by Plasma |
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| Affiliation: | Department of Electronic Engneering |
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| Abstract: | In this paper the influences of plasma nitridation of SiO_2 films on the electron traps in the films are discussed. A method of correction for temperature is put forward. Experiments show that the density and the cqpture of electron traps in the film are increased after plasma nitridation of SiO_2. At the same time, a new trap level related to the defect emerged in nitridation is introduced. If the annealing is chosen suitably, the influence of nitridation of SiO_2 on electron traps can be reduced. |
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| Keywords: | plasmas electron trap nitrides dielectric films/SiO_2 |
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