| 等离子体氮化SiO2膜中电子陷阱的研究 |
| |
| 引用本文： | 吕世骥,蔡跃明.等离子体氮化SiO2膜中电子陷阱的研究[J].东南大学学报(自然科学版),1989,19(2):22-27. |
| |
| 作者姓名： | 吕世骥 蔡跃明 |
| |
| 作者单位： | 东南大学电子工程系，东南大学电子工程系，东南大学电子工程系 南京通讯工程学院 |
| |
| 摘 要： |
|
| 关 键 词： | 氮化 SiO2 电介质膜 电子陷阱 |
The Research on Electron Trap in SiO_2 Film Nitrided by Plasma |
| |
| Institution: | Department of Electronic Engneering |
| |
| Abstract: | In this paper the influences of plasma nitridation of SiO_2 films on the electron traps in the films are discussed. A method of correction for temperature is put forward. Experiments show that the density and the cqpture of electron traps in the film are increased after plasma nitridation of SiO_2. At the same time, a new trap level related to the defect emerged in nitridation is introduced. If the annealing is chosen suitably, the influence of nitridation of SiO_2 on electron traps can be reduced. |
| |
| Keywords: | plasmas electron trap nitrides dielectric films/SiO_2 |
| 本文献已被 CNKI 维普 等数据库收录！ |
