| CMOS/SOD抗核加固电路辐照后的恢复特性 |
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| 引用本文： | 王怀荣,姚达,苏秀娣,许仲德,陆剑侠,顾长志,金曾孙. CMOS/SOD抗核加固电路辐照后的恢复特性[J]. 吉林大学学报(理学版), 1999, 0(3) |
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| 作者姓名： | 王怀荣 姚达 苏秀娣 许仲德 陆剑侠 顾长志 金曾孙 |
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| 作者单位： | 1. 东北微电子研究所,沈阳,110035
2. 吉林大学超硬材料国家重点实验室,长春,130023 |
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| 摘 要： | 以金刚石膜作为绝缘埋层， 利用金刚石膜上的薄层硅（ Ｓ Ｏ Ｄ）技术， 制作 ５４ Ｈ Ｃ Ｔ０３ Ｃ Ｍ Ｏ Ｓ／ Ｓ Ｏ Ｄ 结构的集成电路． 对该电路在辐照后的恢复特性进行研究． 结果表明， Ｓ Ｏ Ｄ 电路在大剂量辐照后的恢复能力明显强于体硅电路； 常规非辐照环境下的高温退火工艺更有利于辐照后的 Ｓ Ｏ Ｄ 电路的快速恢复
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| 关 键 词： | 金刚石膜上的薄层硅 集成电路 抗辐射 恢复特性 |
The Recovery Characteristics of Radiated CMOS/SOD Circuit |
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| Wang Huairong,Yao Da,Su Xiudi,Xu Zhongde,Lu Jianxia,Gu Changzhi,Jin Zengsun. The Recovery Characteristics of Radiated CMOS/SOD Circuit[J]. Journal of Jilin University: Sci Ed, 1999, 0(3) |
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| Authors: | Wang Huairong Yao Da Su Xiudi Xu Zhongde Lu Jianxia Gu Changzhi Jin Zengsun |
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| Abstract: | Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit. Annealing technique is advandageousto the quick recovery of the radiated S O D circuit. |
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| Keywords: | silicon on diam ond integrated circuit radiation hardness recovery characteristic |
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