| Ferroelectricity of weak-polar organic molecules in alternate Langmuir-Blodgett multilayer films |
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| 作者单位： | Li Shuhong,Wang Wencheng(State Key Lab for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China);MA Shihong,LI Bo(Department of Physics, State Key Lab for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433, China);SUN Jinglan,WANG Genshui,MENG Xiangjian,CHU Junhao(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) |
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| 基金项目： | 国家自然科学基金，教育部留学回国人员科研启动基金 |
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| 摘 要： | Pyroelectric material is a polar solid and has been interested since the 1960s. Today it is one of important materials used in infrared detectors[1]. With the development of the devices, the focus point on the materials applied has been transferred from bulk materials to film ones. Ferroelectric material is a kind of pyroelectric materials which spontaneous polarization can be reversed with the direction change of external electric field. Observation of ferroelectric hysteresis loop or not cou…
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| 关 键 词： | 交换LB多层薄膜 铁电性能 弱极性有机分子 氮环 花生酸 |
| 收稿时间： | 2006-10-21 |
Ferroelectricity of weak-polar organic molecules in alternate Langmuir-Blodgett multilayer films |
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| Li,Shuhong,Ma,Shihong,Li,Bo,Sun,Jinglan,Wang,Genshui,Meng,Xiangjian,Chu,Junhao,Wang,Wencheng. Ferroelectricity of weak-polar organic molecules in alternate Langmuir-Blodgett multilayer films[J]. Chinese science bulletin, 2003, 48(20): 2176-2179. DOI: 10.1007/BF03182846 |
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| Authors: | Li Shuhong Ma Shihong Li Bo Sun Jinglan Wang Genshui Meng Xiangjian Chu Junhao Wang Wencheng |
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| Affiliation: | e-mail: shma@ fudan.edu.cn |
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| Abstract: | Ferroelectricity in Langmuir-Blodgett (LB) films (Z-type and alternated Y-type) of nitrogencrown (NC) and arachidic acid (AA) was investigated by electric polarization measurements and surface pressure-molecular area (π-A) isotherm. For Z-type AA LB multilayer and the AA LB films incorporating barium and manganese ions, as well as for Z-type NC LB multilayer and the Y-type NC/AA alternating LB films, typical hysteresis loops of the samples were observed and confirmed existence of the remnant polarizations in the LB films. Their corresponding remnant polarizations were found to be 15, 180, 650, 450 and 9400 μC·m-2, respectively. Therefore, it was demonstrated that the enhancement of ferroelectricity in the LB films could be created by incorporation of barium and manganese ions into the LB film structures and strong interaction between alternating monolayers of the samples. These novel approaches can be employed to create strong ferroelectric LB films to make ferroelectric thin-film device for practical applications. |
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| Keywords: | ferroelectricity alternate LB films hysteresis loop. |
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