| 金属─半导体界面附近的空位电子态 |
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| 引用本文： | 张耀举,张涛.金属─半导体界面附近的空位电子态[J].河南师范大学学报(自然科学版),1994(1). |
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| 作者姓名： | 张耀举 张涛 |
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| 作者单位： | 郑州轻工业学院基础部，河南省科学技术委员会 |
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| 摘 要： | 本文用紧束缚模型发展了金属一半导体界而附近的空位理论．研究结果发现：空位对它附近区域的态密度有一定影响；空位的生成能随空位一界面间距的变化是一个振荡函数．对文中所考虑的界面，空位趋向于朝界面处吸引；当系统中同时存在两个空位时，由于介质极化，空位之间要发生间接相互作用，其间接相互作用能随空位一空位间距的改变发生振荡．
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| 关 键 词： | 紧束缚模型 格林函数 局域态密度 空位的生成能 间接相互作用能 |
The Elcctronical States of the Vaeancy Ncar a Metal-Semiconductor Interface |
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| Zhang Yaoju.The Elcctronical States of the Vaeancy Ncar a Metal-Semiconductor Interface[J].Journal of Henan Normal University(Natural Science),1994(1). |
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| Authors: | Zhang Yaoju |
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| Abstract: | This paper develops the theory of vacancies near a metal-semiconductor interface with-in a tight-binding model.It is shown that the local density of states is influenced only in the immediate vi-cinity of the vacancy,and the vacancy-formation energy is an oseillatory function of the distance of thevacancy from the interface. For the specific interface considered the vacancies tend to be attracted towardsthe interface. When two vacancies are presenting in the system they interact due to the polarization of hemedium,This interaction is shown to have an oscillatory dependence on the intervacancy scparation. |
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| Keywords: | tight-binding modcl Grccn′s function Iocal density of states vacancy-formationenergy indirect interaction energy |
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