| 半导体表面态的研究与展望 |
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| 引用本文： | 萨茹拉,韩元春. 半导体表面态的研究与展望[J]. 内蒙古民族大学学报(自然科学版), 2003, 18(1): 13-16 |
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| 作者姓名： | 萨茹拉 韩元春 |
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| 作者单位： | 1. 内蒙古大学理工学院,内蒙古呼和浩特,010020
2. 内蒙古民族大学物理与机电学院,内蒙古通辽,028043 |
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| 摘 要： | 半导体表面的研究是半导体物理中极为活跃的一个分支，因为半导体器件的体积越来越小，靠近半导体表面附近的物理性质越来越重要。笔者系统地对半导体表面态进行了综述。认为当波矢K取复数时局域于表面附近存在表面电子态，其波函数体内、体外都衰减。同时对半导体表面研究的发展历程、现状以及前景进行了展望。
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| 关 键 词： | 半导体 表面态 表面能级 |
| 文章编号： | 1671-0185(2003)01-0013-04 |
| 修稿时间： | 2002-09-02 |
Study and Advances on Surface State of Semiconductor |
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| Sarula ,HAN Yuan-chun. Study and Advances on Surface State of Semiconductor[J]. Journal of Inner Mongolia University for the Nationalities(Natural Sciences), 2003, 18(1): 13-16 |
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| Authors: | Sarula HAN Yuan-chun |
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| Affiliation: | Sarula 1,HAN Yuan-chun 2 |
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| Abstract: | Study of surface state in semiconductor is a active branch of semiconductor physics.The physics properties of surface are more and more important,by volume of material and device decreasing.In this paper,the surface state of semiconductor is reviewed systematically.It is shown that the state of electrons are localized in the vicinity of the surface and decay rapidly inside and onside the material.The development,current situations and prospects are also reviewed and discussed. |
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| Keywords: | Semiconductor Surface state State of energy level |
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