负偏压增强离子表面扩散机制

对利用热灯丝ＣＶＤ沉积金刚石膜时负衬底偏压强金刚石的核化过程进行了分析。结合等离子体和碰撞等有关理论，从理论上初步地研究了负衬底偏压对增强活性离子沿衬底表面扩散的影响，给出了扩散九，扩散距离与负底偏压之间的关系。结果表明扩散系数和扩散距离都随着负衬底偏压的增大而增大。

Study on Mechanism of Diffusion Enhancement of Ions on Surface by Negative Bias

In the paper, the enhancing process of diamond nucleation by negative substrate bias in hot filament CVD system was analyzed. Combining theory related to plasma and collision, the effects of bias on enhancing diffusion of active ions on substrate surface were primarily investigated theoretically, and the relative formulas of diffusion coefficient and diffusive distance with bias were given. The results showed that diffusion coefficient and diffusive distance increased with raising of negative substrate bias.