| MOS表面反型层少子时变效应研究 |
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| 引用本文： | 刘艳红,魏希文,许铭真,谭长华. MOS表面反型层少子时变效应研究[J]. 大连理工大学学报, 2000, 19(6): 661-663 |
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| 作者姓名： | 刘艳红 魏希文 许铭真 谭长华 |
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| 作者单位： | 1. 大连理工大学,物理系,辽宁,大连,116024
2. 北京大学,微电子研究所,北京,10,0871 |
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| 摘 要： | 为深入研究半导体表面过程，主要针对Ｚerbst方程，用数值拟合法，给出脉冲电压作用下ＭＯＳ器件半导体表面耗尽层宽度随时间变化近似解析解，进而得出与实验结果符合较好的表面少子时变关系解析式；分子表面少子时变过程，为表面电荷转移器件的模拟分析提供了有力的工具。
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| 关 键 词： | 少数载流子 数值解 MOS结构 时变效应 半导体 表面少子 |
Study of time-dependent effect on s urface minority carriers of MOS structure |
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| LIU Yan-hong,WEI Xi-wen,XU Ming-zhen,Tan Chang-hua. Study of time-dependent effect on s urface minority carriers of MOS structure[J]. Journal of Dalian University of Technology, 2000, 19(6): 661-663 |
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| Authors: | LIU Yan-hong WEI Xi-wen XU Ming-zhen Tan Chang-hua |
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| Affiliation: | LIU Yan hong 1,WEI Xi wen 1,XU Ming zhen 2,Tan Chang hua 2 |
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| Abstract: | For further studying the surface process of semiconductor, based on Zerbst equation, an approximate analytical solution for the relationship between the depletion width and the time is given by numerical fitted method when voltage pulse is applied to MOS structure. Then the time dependence process of minority carriers is analyzed, and the approximate solution of it is obtained which is in agreement with the experimental data. All work provides a useful tool for analysis of CCD. |
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| Keywords: | minority carriers numerical solutions/MOS structure time dependent effect |
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