| 磁晶各向异性的高次项对纳米材料的磁滞回线的影响 |
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| 引用本文： | 徐劲松,赵国平,郭乃理.磁晶各向异性的高次项对纳米材料的磁滞回线的影响[J].四川师范大学学报(自然科学版),2011,34(6):854-860. |
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| 作者姓名： | 徐劲松 赵国平 郭乃理 |
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| 作者单位： | 1. 四川师范大学物理与电子工程学院固体物理研究所,四川成都,610066
2. 四川师范大学物理与电子工程学院固体物理研究所,四川成都610066;电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 |
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| 摘 要： | 在一般的磁滞回线计算中,磁晶各向异性能的高次项被忽略.运用一致转动的模型,在外磁场与易轴方向分别平行和垂直的情况下,通过分析磁晶各向异性能的四次方项对铁磁材料磁化过程的影响,得到磁滞回线的形状随磁晶各向异性能四次方和二次方项常数的比值λ的不同而发生变化,并给出不同λ时的矫顽力解析公式.结果对铁磁和铁电材料都适用.
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| 关 键 词： | 一致转动 四次方项 磁滞回线 矫顽力 解析公式 |
The Effect of the Higher Order Term of the Magnetocrystalline Anistropy on the Demagnetization Process in Nanomaterials |
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| XU Jin-song,ZHAO Guo-ping,GUO Nai-li.The Effect of the Higher Order Term of the Magnetocrystalline Anistropy on the Demagnetization Process in Nanomaterials[J].Journal of Sichuan Normal University(Natural Science),2011,34(6):854-860. |
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| Authors: | XU Jin-song ZHAO Guo-ping GUO Nai-li |
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| Institution: | 1(1.College of Physics and Electronic Engineering & Institute of Solid State Physics,Sichuan Normal University,Chengdu 610066,Sichuan; 2.State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan) |
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| Abstract: | In most calculations of hysteresis loops,higher order terms of the magnetocrystalline anistropy are ignored.In this paper,the effect of the fourth order term of the magnetocrystalline anistropy on the demagnetization process has been investigated by using a coherent rotation model,with both parallel and perpendicular easy axes defined relative to the applied field.The shape of hysteresis loop changes with various λ,which is the ratio of the fourth order term and the second one in the magnetocrystalline aniaotropy coefficient.Analytical formula for the coercivity has been derived as a function of λ.The results here are applicable to both ferromagnetic and ferroclectric materials. |
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| Keywords: | coherent rotation fourth order term hysteresis loop coercivity analytical formulae |
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