| 用前线电子理论对掺杂法提高L—B膜导电性的讨论 |
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| 引用本文： | 吴宗汉,唐金花.用前线电子理论对掺杂法提高L—B膜导电性的讨论[J].东南大学学报(自然科学版),1993,23(3):110-113. |
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| 作者姓名： | 吴宗汉 唐金花 |
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| 作者单位： | 东南大学物理系，东南大学物理系，南京电子器件研究所，东南大学化学化工系 |
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| 摘 要： |
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| 关 键 词： | 前线电子 掺杂 LB膜 导电性 |
A Discussion about Improvement of Conductivity of the Doped L-B Films by the Fronte-Electron Theory |
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| Wu Zonghan Huang Fuyuan.A Discussion about Improvement of Conductivity of the Doped L-B Films by the Fronte-Electron Theory[J].Journal of Southeast University(Natural Science Edition),1993,23(3):110-113. |
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| Authors: | Wu Zonghan Huang Fuyuan |
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| Institution: | Wu Zonghan Huang Fuyuan(Department of Physics) Ding Zhifeng (Department of Chemistry and Engineering) Tang Jinhua(Nanjing Electron Devices Institute) |
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| Abstract: | It is reported that the room-temperature conductivity of a conductive L-B film can be improve when doped with dopants. We immerse the CuTsPc L-B film in the iodine solution soluted in conductivity at room temperature. In this paper, the electronic structures of three dopants (I_2, NH_3,BF_3) are calculated and compared with those of the CuTsPc L-B film in order to see whether the front electrons of three dopants could match those of the CuTsPc L-B film. And it is concluded that two of these three dopants (I_2and NH_3) are suitable for the CuTsPc L-B film according to Fukui's fronter electron theory. |
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| Keywords: | superconducting films conductivity CuTsPc dopant fronter electron theory |
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