| 氧化锡薄膜的冷电子发射 |
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| 引用本文： | 章壮健,杨锡良,孙云龙,高龙关. 氧化锡薄膜的冷电子发射[J]. 应用科学学报, 1987, 5(3): 249-253 |
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| 作者姓名： | 章壮健 杨锡良 孙云龙 高龙关 |
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| 作者单位： | 复旦大学 |
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| 摘 要： | 氧化锡薄膜高阻区具有冷电子发射的特性.本文所给出的初步实验结果表明,氧化锡薄膜主要发射区表面的元素成分和配比均发生了变化,发射电子能量分布不同于场致发射的电子能量分布.气体的种类和压强都可以对它的电子发射性能产生不同的影响.
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| 收稿时间： | 1984-06-21 |
| 修稿时间： | 1984-11-10 |
COLD EMISSION FROM TIN OXIDE FILMS |
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| ZHANG ZHUANGJIAN,YANG XILIANG,SUN YUNLONG,GAO LONGGTTAN. COLD EMISSION FROM TIN OXIDE FILMS[J]. Journal of Applied Sciences, 1987, 5(3): 249-253 |
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| Authors: | ZHANG ZHUANGJIAN YANG XILIANG SUN YUNLONG GAO LONGGTTAN |
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| Affiliation: | Fudan University |
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| Abstract: | The high-resistance region in Tin Oxide film acts as a cold electron source with noncollimated electron output current of the order of 100-200 μA. The primary experimental results show that the high-resistance region with the capability of electron emission has a change in composition, and the energy distribution of the emitted electrons is different from that of the field emission. The magnitude of the electron current is influenced by both the gaseous component and the pressure in the test chamber. |
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