| 砷化镓中某些深能级陷阱间的平衡 |
| |
| 引用本文： | 邹元燨. 砷化镓中某些深能级陷阱间的平衡[J]. 应用科学学报, 1983, 1(1): 9-16 |
| |
| 作者姓名： | 邹元燨 |
| |
| 作者单位： | 中国科学院上海冶金研究所 |
| |
| 摘 要： | 介绍了作者对GaAs中四个深能级缺陷间的平衡所作的计算,并对这些缺陷的本性作出推测,对文献中的一些不同看法以及不同材料中这些能级数量上的差异作了讨论.最后对以前文章中的某些论点作了修改和补充.
|
| 收稿时间： | 1981-09-22 |
EQUILIBRIA AMONG CERTAIN DEEP-LEVEL TRAPS IN GaAs |
| |
| ZOU YUANXI. EQUILIBRIA AMONG CERTAIN DEEP-LEVEL TRAPS IN GaAs[J]. Journal of Applied Sciences, 1983, 1(1): 9-16 |
| |
| Authors: | ZOU YUANXI |
| |
| Affiliation: | Shanghai Institute of Metallurgy, Academia Sinica |
| |
| Abstract: | A proportionality relationship has recently been found to exist between the density of the EL2 electron trap in VPE GaAs and the As/Ga ratio in the gas phase, and also between the ratio[C]/[EL2] and n300K for VPE GaAs grown in N2, where C is a new electron trap found by Ozeki et al. These relationships have led us to the supposition that C and EL2 might be (VGa) 2 and AsGaVGaVAs respectively, and the equilibrium among AsAs (VGa) 2 and AgGaVGaVAs has been named as the C-EL2 or C-A equilibrium. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《应用科学学报》浏览原始摘要信息 |
|
点击此处可从《应用科学学报》下载全文 |
|
