首页 | 本学科首页   官方微博 | 高级检索  
     

Research progress of self-organized Ge quantum dots on Si substrate
引用本文:HUANG Changjun,YU Jinzhong,WANG Qiming. Research progress of self-organized Ge quantum dots on Si substrate[J]. 自然科学进展(英文版), 2004, 14(5): 388-395. DOI: 10.1080/10020070412331343671
作者姓名:HUANG Changjun  YU Jinzhong  WANG Qiming
作者单位:State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
基金项目:国家自然科学基金,国家高技术研究发展计划(863计划),国家重点基础研究发展计划(973计划)
摘    要:A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs).Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate,the structure analysis of multilayer Ge QDs,the optical and electronic properties of these nanostructures,and the approaches to fabricating ordered Ge quantum dots.

关 键 词:quantum dots  Si-based optoelectronics  SiGe material

Research progress of self-organized Ge quantum dots on Si substrate
Huang Changjun,YU Jinzhong,WANG Qiming. Research progress of self-organized Ge quantum dots on Si substrate[J]. Progress in Natural Science, 2004, 14(5): 388-395. DOI: 10.1080/10020070412331343671
Authors:Huang Changjun  YU Jinzhong  WANG Qiming
Affiliation:State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China
Abstract:A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs).Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate,the structure analysis of multilayer Ge QDs,the optical and electronic properties of these nanostructures,and the approaches to fabricating ordered Ge quantum dots.
Keywords:quantum dots  Si-based optoelectronics  SiGe material
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《自然科学进展(英文版)》浏览原始摘要信息
点击此处可从《自然科学进展(英文版)》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号