| Research progress of self-organized Ge quantum dots on Si substrate |
| |
| 作者姓名： | HUANG Changjun YU Jinzhong WANG Qiming |
| |
| 作者单位： | State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| |
| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863计划)，国家重点基础研究发展计划(973计划) |
| |
| 摘 要： | A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs).Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate,the structure analysis of multilayer Ge QDs,the optical and electronic properties of these nanostructures,and the approaches to fabricating ordered Ge quantum dots.
|
| 关 键 词： | quantum dots Si-based optoelectronics SiGe material |
Research progress of self-organized Ge quantum dots on Si substrate |
| |
| HUANG Changjun,YU Jinzhong,WANG Qiming.Research progress of self-organized Ge quantum dots on Si substrate[J].Progress in Natural Science,2004,14(5):388-395. |
| |
| Authors: | Huang Changjun YU Jinzhong WANG Qiming |
| |
| Institution: | State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| |
| Abstract: | A review is presented on recent research development of self-organized Ge/Si quantum dots (QDs).Emphasis is put on the morphological evolution of the Ge quantum dots grown on Si (001) substrate,the structure analysis of multilayer Ge QDs,the optical and electronic properties of these nanostructures,and the approaches to fabricating ordered Ge quantum dots. |
| |
| Keywords: | quantum dots Si-based optoelectronics SiGe material |
| 本文献已被 CNKI 万方数据 等数据库收录！ |
| 点击此处可从《自然科学进展(英文版)》浏览原始摘要信息 |
| 点击此处可从《自然科学进展(英文版)》下载免费的PDF全文 |
