成分对CoCr薄膜磁畴影响的研究

对Cr含量为0-23 at％的不同成分系列的CoCr合金薄膜磁畴的研究表明,随着Cr成分增多时其磁各向异性和相关的磁畴结构都敏感地变化。当Cr含量少于17at％时,面内磁化强度为主,并有多种结构形式。超过Cr含量11.2 at％后,少量的垂直磁化强度点畴出现,并随Cr含量增多而增多。Cr含量在17-23 at％的范围内可获得垂直磁各向异性为主的CoCr膜,也可能得到用于高密度垂直磁记录的优良薄膜磁性能。显微照片显示了点畴的尺寸比膜表面的晶粒的或膜断面的晶柱的尺寸都大些。因此,可以得出结论,即其一个自发磁化强度点畴是由一束晶柱或长成的晶粒组成,并都处在单畴状态。

The Study on the Influence of Composition on Magnetic Domains of CoCr Films

Studying on the magnetic domains of different composition sets of CoCr alloy thin films with Cr content of 0-23 at%, experiment shows that the magnetic anisotropy and: related magnetic domain structure sensitively vary as the Cr at% increases. When Cr less than 17 at%, in-plane magnetization dominates,while beyond Cr 11.2 at%, a few amount of perpendicular magnetization dot domains appeared and increased as Cr at% increased. In the range of Cr 17-23 at% the perpendicular magnetic anisotropy can become dominant, good film magnetic properties for high density perpendicular magnetization recording (PMR) can be obtained. Micrographs also show that the sizes of the domains are larger than that of either the surface crystallites or the crystaline columns of the film cross-section. Thus, it can be concluded, that a spontaneous magnetization dot domain is consisted of a bundle of crystalline columns or grown-up crystallites, which all are in a single domain mode.