| 电阻耦合单电子晶体管电学性能分析 |
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| 引用本文： | 杨涛,蒋建飞,蔡琪玉. 电阻耦合单电子晶体管电学性能分析[J]. 上海交通大学学报, 2002, 36(6): 807-811 |
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| 作者姓名： | 杨涛 蒋建飞 蔡琪玉 |
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| 作者单位： | 上海交通大学,微米/纳米科学技术研究院,上海,200030 |
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| 基金项目： | 国家自然科学基金 (69890 2 2 4)，上海 AM基金(980 0 9)资助项目 |
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| 摘 要： | 基于单电子系统半径经典模型，分析了电阻耦合单电子晶体管的电学特性，得到其电学性能不随背景电荷分布变化的特点，通过时域特性分析，指出了时延参数τ＝C∑Rg，并用Monte-Carlo法对其构成的反相器进行了模拟验证。
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| 关 键 词： | 电学性能 单电子晶体管 电阻耦合 时域特性分析 背景电荷 时延参数 |
| 文章编号： | 1006-2467(2002)06-0807-05 |
| 修稿时间： | 2001-06-29 |
Electrical Characteristic Analysis of Resistively Coupled Single-Electron Transistor |
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| YANG Tao,JIANG Jian fei,CAI Qi yu. Electrical Characteristic Analysis of Resistively Coupled Single-Electron Transistor[J]. Journal of Shanghai Jiaotong University, 2002, 36(6): 807-811 |
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| Authors: | YANG Tao JIANG Jian fei CAI Qi yu |
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| Abstract: | According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge. The time domain characteristics of R SET was analyzed, and its delay parameter was pointed out. Simulations of the inverter based on R SET using Monte Carlo means were accomplished for the validation. |
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| Keywords: | single electron transistor(SET) resistively couple time domain characteristics analysis background charge |
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