A comprehensive consideration of bias voltage and temperature to extract the intrinsic frequency response of photodiodes |
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Authors: | ShuoFu Chen Liang Li Hao Wu LiXian Wang JianHong Ke Wei Li Liang Xie NingHua Zhu |
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Institution: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | Frequency response is one of the most important characteristics of photodiode (PD). The upper limitation of the bandwidth of a PD is determined by its intrinsic frequency response. Based on the extraction method to extract the intrinsic frequency response, we take a further study to analyze the impact of the reverse bias voltage and the temperature on the frequency response of PDs. With the help of physical model, the experimental data and fitted results based on the reverse bias voltage and temperature separately are discussed, then the most reliable intrinsic frequency response of a PD is obtained. |
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Keywords: | photodiode intrinsic frequency response extraction method optoelectronic |
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