CN_x薄膜的制备及电子结构

采用反应溅射方法制备了氮化碳薄膜，研究了反应气体压力、溅射功率对薄膜形成的影响，并用Ｘ射线电子能谱（ＸＰＳ） 和富里叶变换红外光谱（ＦＴＩＲ）对样品的电子结构进行了分析．结果表明：反应气体Ｎ２ 的压力太高或太低、溅射功率太大或太小，均不利于氮化碳膜的形成；在Ｎ２ 压力为８ Ｐａ、溅射功率为２００ Ｗ 时，薄膜的氮原子数分数得到最大值４１％ ；ＸＰＳ和ＦＴＩＲ分析结果揭示了膜中没有自由的Ｎ原子，所有的Ｎ原子均与Ｃ原子作用形成化学键，而且Ｃ Ｎ 单键、Ｃ Ｎ 双键、Ｃ Ｎ 三键共存．膜中Ｃ Ｈ 和Ｎ Ｈ 振动模式的存在，说明沉积在Ｓｉ 衬底上的氮化碳薄膜有较强的从空气中吸收氢的能力．

THE PREPARATION AND CHARACTERIZATION OF CN x THIN FILMS

Carbon nitride thin films have been deposited by radio frequency sputtering at different reactive gas pressure and sputtering power. The electron structure of the carbon nitride thin films has been characterized with X ray photo electron energy spectroscopy (XPS) and Fourier transform infrared spectroscopy. It is showed that too high or too low nitrogen pressure and sputtering power are unfavorable to form carbon nitride thin film. N atom concentration in the thin films arrived at maximum 0.41 when nitrogen pressure is 8 Pa and sputtering power is 200 W. There is not any free N atom, for all N atoms interact with C atom and CN, CN and CN are formed. The existence of CH and NH vibration mode shows that the thin films deposited on Si substrate have a strong ability to suck up hydrogen from atmosphere.