| 单电子输运器件中的动态电子传输 |
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| 引用本文： | 董清,郭华忠.单电子输运器件中的动态电子传输[J].四川大学学报(自然科学版),2012,49(2):391-396. |
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| 作者姓名： | 董清 郭华忠 |
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| 作者单位： | 四川大学物理科学与技术学院,成都,610065 |
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| 基金项目： | 国家自然科学基金重点项目(60436010)；国家科技支撑计划课题(2006BAF06B09) |
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| 摘 要： | 在基于GaAs/AlGaAs异质结二维电子气的声表面波单电子输运器件中,利用声表面波诱发的动态量子点依次通过由串联的三对刻蚀门电极各自所形成的准一维通道,成功实现了电子的量子化动态输运,并对输运特性进行了分析.通过提出局域态杂质模型和电子的屏蔽效应,解释了实验中观测到的双峰声电电流现象.
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| 关 键 词： | GaAs/AlGaAs异质结 声表面波 单电子器件 局域态杂质 |
| 收稿时间： | 1/9/2012 12:00:00 AM |
The dynamic electron transferin single-electron transport device |
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| DONG Qing and GUO Hua-Zhong.The dynamic electron transferin single-electron transport device[J].Journal of Sichuan University (Natural Science Edition),2012,49(2):391-396. |
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| Authors: | DONG Qing and GUO Hua-Zhong |
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| Institution: | College of Physical Science and Technology, Sichuan University;College of Physical Science and Technology, Sichuan University |
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| Abstract: | The surface acoustic wave single electron transport device is fabricated on GaAs/AlGaAs heterostructure. In contrast to the previous studies, the moving quantum dots induced by SAW go through the quasi one dimensional channel defined by three pairs of etched split gates in series, and then the quantized dynamic electron transfer is successfully realized. The transport property is analyzed, and the localized impurity states model and the screening effect are presented to explain the observed double peak like current as a function of gate voltage. |
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| Keywords: | GaAs/AlGaAs heterostructure surface acoustic wave single electron transport device localized impurity states |
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