| 激光诱导单晶硅的液相腐蚀 |
| |
| 引用本文： | 宋登元,王英民,李宝通,郝晓丽,穆新华. 激光诱导单晶硅的液相腐蚀[J]. 河北大学学报(自然科学版), 1993, 0(3) |
| |
| 作者姓名： | 宋登元 王英民 李宝通 郝晓丽 穆新华 |
| |
| 作者单位： | 河北大学电子与信息工程系(宋登元，王英民，李宝通，郝晓丽)，河北大学电子与信息工程系(穆新华) |
| |
| 摘 要： | 本文研究了利用聚焦的Ar~+激光束对单晶硅液相腐蚀的原理与特性。考察了腐蚀速率随激光功率密度的变化,讨论了腐蚀坑的形状与腐蚀条件关系(功率、时间),最后给出几点结论。
|
| 关 键 词： | 硅 激光 液相腐蚀 |
Laser-Induced Aqueous Etching of Monocry stalling Silicon |
| |
| Song Dengyuan Wang Yingmin Li Baotong Hao XiaoLi Mu Xinhua. Laser-Induced Aqueous Etching of Monocry stalling Silicon[J]. Journal of Hebei University (Natural Science Edition), 1993, 0(3) |
| |
| Authors: | Song Dengyuan Wang Yingmin Li Baotong Hao XiaoLi Mu Xinhua |
| |
| Affiliation: | Department of Electronic and Informational Engineering |
| |
| Abstract: | Principles and characteristics of laser-induced aqueous etching (LIAE) of silicon using a focused argon-ion laser beam have been investigated. The dependence of etch rate on laser intensity is observed.The effects of etch parameters (power, time) on the etch profile are also discussed.Finally , some conclusions about LIAE for Si crystal are given. |
| |
| Keywords: | Silicon Laster Aqueous etching |
| 本文献已被 CNKI 等数据库收录！ |
