Di-electrophoresis assembly and fabrication of SWCNT field-effect transistor

In the process of fabricating nano electrical device or system based on single-walled carbon nanotube (SWCNT), the controllable assembly and fabrication of SWCNT field-effect transistor (SWCNT FET) is a key issue. SWCNT FET is the most basic and important component in nano electronics. After micro-electrode chip of back-gate FET is designed and fabricated, di-electrophoresis technology is adopted to realize the controllable alignment and assembly of SWCNTs, based on dispersing SWCNT by sodium dodecyl sulphate (SDS) facilitated ultra-sonication technique and removing impurities by centrifugal technique. The experiments of SWCNTs assembly demonstrate that SWCNTs are aligned and assem-bled uniformly at the microelectrodes gap with the alignment density nearly proportional to di-elec- trophoresis duration and solution concentration. After the processes of rinsing, drying and improving, metallic SWCNTs among the assembled SWCNTs are burned out and residual SDS is removed, and perfect field-effect performance of SWCNT FET is eventually obtained.