| 硅单电子晶体管制备及特性 |
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| 引用本文： | 卢刚. 硅单电子晶体管制备及特性[J]. 西安理工大学学报, 2002, 18(2): 148-150 |
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| 作者姓名： | 卢刚 |
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| 作者单位： | 西安理工大学,自动化与信息工程学院,陕西,西安,710048 |
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| 摘 要： | 采用电子束光刻技术和反应离子刻蚀等工艺，在P型SIMOX硅片上成功地制备了一种单电子晶体管。提供了一种制备量子线和量子点的工艺方法，在器件的电流，电压特性上可观测到明显的库仑阻塞效应和单子隧穿效应，该器件的工作温度可达到77K。
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| 关 键 词： | 硅单电子晶体管 制备 库仑阻塞 单电子隧穿 量子点 |
| 文章编号： | 1006-4710(2002)02-0148-03 |
| 修稿时间： | 2001-08-09 |
Fabrication and Characteristics of a Si-Based Single Electron Transistor |
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| LU Gang. Fabrication and Characteristics of a Si-Based Single Electron Transistor[J]. Journal of Xi'an University of Technology, 2002, 18(2): 148-150 |
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| Authors: | LU Gang |
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| Abstract: | The successful fabrication of Si based single electron transistors (SETs) on P type SIMOX substrates,by using electron beam (EB) lithography and reactive ion etching (RIE) processes is reported in this paper.Also,the technological process is offered for the controlled fabrication of the quantum wires (QWs) and quantum dots (QDs). The apparent Coulomb blockade and single electron tunneling are observed in the current voltages characteristics of the SETs at 77K. |
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| Keywords: | single electron transistor Coulomb blockade single electron tunneling quantum dot |
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