| 过量镁掺杂的p-GaN的变温霍尔效应研究 |
| |
| 引用本文： | 周淑菊,郭洪英,孙元平,林圣路. 过量镁掺杂的p-GaN的变温霍尔效应研究[J]. 烟台大学学报(自然科学与工程版), 2007, 20(2): 99-101,107 |
| |
| 作者姓名： | 周淑菊 郭洪英 孙元平 林圣路 |
| |
| 作者单位： | 1. 山东师范大学,物理与电子科学研究院,山东,济南250014
2. 烟台大学,光电信息科学技术学院,山东,烟台264005 |
| |
| 基金项目： | 国家自然科学基金;烟台大学博士后科研启动基金 |
| |
| 摘 要： | 利用变温霍尔效应研究了过量镁掺杂p-GaN样品空穴浓度随温度变化以及迁移率与掺杂浓度的关系,指出了过量镁掺杂引起位错密度的增加是导致空穴载流子浓度随掺杂浓度增加而减少的主要原因.尽管适当增加镁的掺杂浓度可以提高样品中空穴的迁移率,但是超高的重掺杂将会导致样品中的空穴浓度和迁移率同时急剧下降.
|
| 关 键 词： | 霍尔效应 重掺杂 |
| 文章编号： | 1004-8820（2007）02-0099-03 |
| 收稿时间： | 2006-02-27 |
| 修稿时间： | 2006-02-27 |
Temperature-Dependent Hall Measurement for Heavily Mg-doped p-GaN |
| |
| ZHOU Shu-ju,GUO Hong-ying,SUN Yuan-ping,LIN Sheng-lu. Temperature-Dependent Hall Measurement for Heavily Mg-doped p-GaN[J]. Journal of Yantai University(Natural Science and Engineering edirion), 2007, 20(2): 99-101,107 |
| |
| Authors: | ZHOU Shu-ju GUO Hong-ying SUN Yuan-ping LIN Sheng-lu |
| |
| Affiliation: | 1. College of Physics and Electronics, Shandong Normal University, Jinan 250014, China ;2. Institute of Science and Technology for Opto-electronic Information, Yantai 264005, China |
| |
| Abstract: | The relationships of the hole mobility and concentration with Mg doping content have been studied systemically for the heavily doped p-GaN samples by using temperature-dependent Hall measurement.The reason for the decrease of the hole concentration with Mg doping content is attributed to the increase of dislocation density in the samples.Moderate increase of Mg doping will improve the mobility in the samples,but the hole concentration and mobility will decrease dramatically if the sample is much more heavily doped. |
| |
| Keywords: | p-GaN |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
