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Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB2
引用本文:H.K.Liu S.H.Zhou S.Soltanian J.Horvat A.V.Pan M.J.Qin X.L.Wang M.Ionescu S.X.Dou. Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB2[J]. 清华大学学报, 2003, 8(3): 307-315
作者姓名:H.K.Liu S.H.Zhou S.Soltanian J.Horvat A.V.Pan M.J.Qin X.L.Wang M.Ionescu S.X.Dou
作者单位:InstituteforSuperconductingandElectronicMaterials,UniversityofWollongong,NorthfieldsAvenue,WollongongNSW2522,Australia
摘    要:The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications because of the relatively low cost of fabrication, high critical current densities (Jc)and fields, large coherence length, absence of Weak links, higher Tc (Tc = 39 K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb3Sn and Nb-Ti alloys). However, the weak flux pinning in the magnetic field remains a major challenge. This paper reports the most interesting results on nenomaterial (SiC and Si) doping in magnesium diboride. The high density of nano-scele defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for many practical applications at 5K to 25K up to 5T.

关 键 词:纳米碳化硅 临界电流密度 MgB2 二硼化镁 铌钛合金 超导体

Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB2
H.K.Liu,S.H.Zhou,S.Soltanian,J.Horvat,A.V.Pan,M.J.Qin,X.L.Wang,M.Ionescu,S.X.Dou. Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB2[J]. Tsinghua Science and Technology, 2003, 8(3): 307-315
Authors:H.K.Liu  S.H.Zhou  S.Soltanian  J.Horvat  A.V.Pan  M.J.Qin  X.L.Wang  M.Ionescu  S.X.Dou
Abstract:The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications becauseigher Tc (Tc=39 K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb3Sn and Nb-Ti alloys). However, the weak flux pinning in the magneticfield remains a major challenge. This paper reports the most interesting results on nanomaterial (SiC and Si) doping in magnesium diboride. The high densityof nano-scale defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for many practical applications at 5 K to 25 K up to 5 T.
Keywords:magnesium diboride (MgB2)  MgB2/Fe wires doped with nano-SiC  MgB2/Fewires doped with nano-Si  critical current density  flux pinning
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