| SixGel-x/Si和Si/Ge应变层超晶格及其器件的应用 |
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| 引用本文： | 宋登元.SixGel-x/Si和Si/Ge应变层超晶格及其器件的应用[J].河北大学学报(自然科学版),1993(1). |
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| 作者姓名： | 宋登元 |
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| 作者单位： | 河北大学电子系 |
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| 摘 要： | SixGel-x/Si和Si/Ge应变层超晶格(SLS)的新颖物理特性显示了它们在各种半导体器件应用方面的诱人前景。本文综述了这类超晶格的生长特性、能带结构以及它们的电学和光学特性。最后介绍了它们在HBTs,p沟BICFETs,n沟和p沟MODFETs以及p-i-n和APD光电探测器应用方面的进展。
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| 关 键 词： | SixGel-x/Si和Si/GeSLS HBT BICFET MODFET 光电探测器 |
Si_xGe_(1-x) / Si and Si / Ge Strained-Layer Superlattices (SLS) and Their Device Applications |
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| SongDengyuan.Si_xGe_(1-x) / Si and Si / Ge Strained-Layer Superlattices (SLS) and Their Device Applications[J].Journal of Hebei University (Natural Science Edition),1993(1). |
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| Authors: | SongDengyuan |
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| Institution: | Department of Electronics |
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| Abstract: | The new physical properties of SixG1-x/ Si and Si/ Ge strainted-layer superlattices ( SLS) exhibit the their attractive perspectives in the application field of various nwe future semiconductor devices.The paper reviews the growth characteristics, band structre as well as electrical and optical properities of this SLS. Finally, recent advances of their device applications including HBTs, P-channel BICFETs, N and P channel MODFETs as well ad p-i-n and APD photodetectors are presented. |
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| Keywords: | Six Gel-x/ SiandSi / Ge SLS HBT BICFET MODFET Photodetector |
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