| 真空反应蒸发法制备ZnO透明导电薄膜 |
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| 引用本文： | 马瑾,李淑英.真空反应蒸发法制备ZnO透明导电薄膜[J].山东大学学报(理学版),1994(2). |
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| 作者姓名： | 马瑾 李淑英 |
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| 作者单位： | Inst.of Optoelectronic Materials &Devices，Shandong Univ.，Jinan |
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| 摘 要： | 以ＺｎＣｌ２作为蒸发源，采用真空反应蒸发技术制备出具有高透过率和电导率的ＺｎＯ薄膜．对制备薄膜的结构，电学和光学特性进行了测量．
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| 关 键 词： | ZnO薄膜 透过率 电阻率 |
PREPARATION OF ZnO TRANSPARENT CONDUCTIVE FILMS BY REACTIVE EVAPORATION |
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| Ma Jin,Li Shuying.PREPARATION OF ZnO TRANSPARENT CONDUCTIVE FILMS BY REACTIVE EVAPORATION[J].Journal of Shandong University,1994(2). |
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| Authors: | Ma Jin Li Shuying |
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| Abstract: | Films of ZnO with high optical transmission and conduction were preparated byeysporating zinc Chloride(ZnCl2) in oxygen.Structure,optical and electrical propertiesof the deposited films were investigated. |
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| Keywords: | ZnO fllms transmission electrical conductivity |
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