| 砷化镓光导开关的畴电子崩理论分析 |
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| 引用本文： | 刘鸿,阮成礼,郑理. 砷化镓光导开关的畴电子崩理论分析[J]. 科学通报, 2011, 56(9): 679-684. DOI: 10.1360/972010-1474 |
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| 作者姓名： | 刘鸿 阮成礼 郑理 |
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| 作者单位： | 成都大学电子信息工程学院;电子科技大学电子科学技术研究院;成都电子机械高等专科学校; |
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| 基金项目： | 国防探索项目资助(713ty1010) |
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| 摘 要： | 在分析半绝缘(SI)砷化镓光导开关(PCSS)中丝状电流(流注)形成和传播的实验结果 的基础上, 提出了高增益砷化镓光导开关中的畴电子崩(EAD)理论. 该理论完善了EAD 概 念, 揭示了高增益GaAs PCSS 中局域内的强电场作用和高载流子密度效应使非平衡载流子 密度稳定增长, 从而导致流注形成. 应用EAD理论合理地解释了GaAs PCSS 中电流丝的形 成和传播, 解释了在器件两端的偏置电场低于载流子本征碰撞电离的电场阈值条件下器件 中存在载流子雪崩生长等实验现象, 结果表明在这类具有转移电子效应的半导体器件中, EAD 理论是分析流注形成的基本理论.
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| 关 键 词： | 光导开关 强电场作用 高载流子密度效应 稳定增长 畴电子崩 流注传播 |
| 收稿时间： | 2010-12-07 |
Analysis of the theory of the electron avalanche domain (EAD) in GaAs photoconductive semiconductor switches |
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| LIU Hong,RUAN ChengLi , ZHENG Li College of Electronic Information Engineering,Chengdu University,Chengdu ,China,Research Institute of Electronic Science , Technology of UESTC,Chengdu ,Chengdu Electron-Mechanical College,Chengdu. Analysis of the theory of the electron avalanche domain (EAD) in GaAs photoconductive semiconductor switches[J]. Chinese Science Bulletin, 2011, 56(9): 679-684. DOI: 10.1360/972010-1474 |
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| Authors: | LIU Hong RUAN ChengLi & ZHENG Li College of Electronic Information Engineering Chengdu University Chengdu China Research Institute of Electronic Science Technology of UESTC Chengdu Chengdu Electron-Mechanical College Chengdu |
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| Affiliation: | LIU Hong1,RUAN ChengLi2 & ZHENG Li3 1College of Electronic Information Engineering,Chengdu University,Chengdu 610106,China,2Research Institute of Electronic Science and Technology of UESTC,Chengdu 611731,3Chengdu Electron-Mechanical College,Chengdu 611730 |
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| Abstract: | An electron avalanche domain (EAD) theory for the filamentary current (streamer) formation and propagation in semi-insulating (SI) GaAs photoconductive semiconductor switches (PCSS) has been derived from the analysis of the experiments. The theory perfects the EAD concept and reveals that the steady increase of the non-equilibrium carrier density for the strong electric field and the high carrier density effect can lead to form the streamer in the local area of the high gain GaAs PCSS. The EAD theory is use... |
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| Keywords: | photoconductive semiconductor switch (PCSS) high electric field effect high carrier density effect steady increase electron avalanche domain (EAD) streamer propagation |
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