| 多晶硅与单晶硅的扩散比较 |
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| 引用本文： | 杜忠明,刘祖明. 多晶硅与单晶硅的扩散比较[J]. 云南师范大学学报(自然科学版), 2007, 27(1): 54-56,68 |
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| 作者姓名： | 杜忠明 刘祖明 |
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| 作者单位： | 云南师范大学太阳能研究所,云南,昆明,650092 |
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| 基金项目： | 云南省科技厅省院省校合作资金资助项目（2003JAACA02A040）. |
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| 摘 要： | 相同工艺下多晶硅和单晶硅的扩散结果区别非常明显，在扩散温度较低时，多晶硅扩散后的方块电阻大于相同条件下的扩散单晶硅；在扩散温度较高时，多晶硅扩散后的方块电阻小于单晶硅，文章从多晶硅的结构特点对此现象进行了解释。
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| 关 键 词： | 单晶硅 多晶硅 扩散 |
| 文章编号： | 1007-9793（2007）01-0054-03 |
| 修稿时间： | 2005-12-22 |
Diffusion Comparative Research on Multicrystalline and Singlecrystalline Silicon |
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| DU Zhong-ming,LIU Zu-ming. Diffusion Comparative Research on Multicrystalline and Singlecrystalline Silicon[J]. Journal of Yunnan Normal University (Natural Sciences Edition), 2007, 27(1): 54-56,68 |
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| Authors: | DU Zhong-ming LIU Zu-ming |
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| Affiliation: | Solar Energy Research Institute of Yunnan Normal University, Kunming 650092,China |
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| Abstract: | Diffuse result difference between polycrystalline and single-crystalline silicon under the same technology is apparent.With lower diffusion temperature,sheet resistivity of diffused multicrystalline silicon is large than the singlecrystalline silicon diffused at same condition;nevertheless,with higher diffusion temperature,the sheet resistivity of diffused multicrystalline silicon is small than the diffused singlecrystalline silicon's.This article will give an interpretation of this phenomena from the character of the multicrystalline silicon structure. |
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| Keywords: | single--crystalline silicon polycrystalline silicon diffuse |
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