| HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs |
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| 作者姓名： | 黄文韬 罗广礼 史进 邓宁 陈培毅 钱佩信 |
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| 作者单位： | Institute of Microelectronics，Tsinghua University，Beijing 100084，China，Institute of Microelectronics，Tsinghua University，Beijing 100084，China，Institute of Microelectronics，Tsinghua University，Beijing 100084，China，Institute of Microelectronics，Tsinghua University，Beijing 100084，China，Institute of Microelectronics，Tsinghua University，Beijing 100084，China，Institute of Microelectronics，Tsinghua University，Beijing 100084，China |
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| 基金项目： | Supported by the National Natural Science Foundation of China(No.69836020)，the“985” Program of the Ministry of Education(No.985-information-40 key-5) |
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| 摘 要： | High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.
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HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs |
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| HUANG Wentao LUO Guangli SHI Jin
DENG Ning,CHEN Peiyi,QIAN Peixin
Institute of Microelectronics. Tsinghua University,Beijing . China.HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs[J].Tsinghua Science and Technology,2003,8(2). |
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| Authors: | HUANG Wentao LUO Guangli SHI Jin
DENG Ning CHEN Peiyi QIAN Peixin
Institute of Microelectronics Tsinghua University Beijing China |
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| Institution: | HUANG Wentao LUO Guangli SHI Jin
DENG Ning,CHEN Peiyi,QIAN Peixin
Institute of Microelectronics. Tsinghua University,Beijing 100084. China |
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| Abstract: | High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results. |
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| Keywords: | high-vacuum/chemical-vapor deposition (HV/CVD) SiGe relaxed buffer heterostructure metal-oxide-silicon field effect transister (HMOSFET) i critical layer thickness |
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