| GaN LED量子阱光发射模型 |
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| 引用本文： | 邹晓,徐静平,陈卫兵.GaN LED量子阱光发射模型[J].华中科技大学学报(自然科学版),2005,33(11):39-41. |
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| 作者姓名： | 邹晓 徐静平 陈卫兵 |
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| 作者单位： | 华中科技大学,电子科学与技术系,湖北,武汉,430074;江汉大学,机电与建筑工程学院,湖北,武汉,430056;华中科技大学,电子科学与技术系,湖北,武汉,430074 |
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| 基金项目： | 国家自然科学基金资助项目（60176030）. |
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| 摘 要： | 在分析GaN LED量子阱结构对载流子限制和俘获的基础上,考虑量子限制Stark效应和Franz-Kddysh效应,提出了一种基于InGaN有源区的载流子复合及光发射模型.模拟结果表明LED的光发射效率和波长依赖于有源区In组分变化引起的势能涨落和阱尺寸,并得到LED发光波长红移的原因为：非故意掺杂引入新的施主能级和受主能级,新能级之间以小于带隙的能量跃迁;Franz-Keldysh效应随阱厚的增加而加强;压电极化和自发极化形成的内电场在空间上将电子和空穴隔开,但电子和空穴波函数的交叠允许它们在较低的能级上辐射复合;以及带边吸收的影响.
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| 关 键 词： | 量子阱 InGaN/GaN 发光二极管 发光强度 |
| 文章编号： | 1671-4512（2005）11-0039-03 |
| 收稿时间： | 2004-12-17 |
| 修稿时间： | 2004年12月17 |
Light emitting model of GaN LED quantum well |
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| Zou Xiao,Xu Jingping,Chen Weibing.Light emitting model of GaN LED quantum well[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,2005,33(11):39-41. |
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| Authors: | Zou Xiao Xu Jingping Chen Weibing |
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| Abstract: | The mechanism of the carrier capture and location caused by GaN-light emitting diode(LED) quantum well structure was analyzed.On the basis of Stark effect and Franz-Keldysh effect,a model for light emitting and recombination of InGaN active area carrier was proposed.The simulation results indicated that the light emitting is of efficiecy and wavelength,depending on potential fluctuation,which was changed by the composition of In and the size of the quantum well,and obtainig the reason of lighting red shift: unintended doping introduces new energy level,transitions occur between new level less band gap;Franz-Keldysh effect well enhanced with thickness increasing,inner electrical field induced by piezoelectricity and spontaneity polarization separated electron and hole spatially,radicalization recombination occured at lower energy level because of wave function overlap of electron and hole;band edge absorbing affects wavelength. |
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| Keywords: | quantum well InGaN/GaN light emitting diode light emitting intensity |
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