| 基于扩散模型的ZnO/p-Si异质结伏安特性研究 |
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| 引用本文： | 熊超,姚若河,耿魁伟. 基于扩散模型的ZnO/p-Si异质结伏安特性研究[J]. 华南理工大学学报(自然科学版), 2011, 39(2): 1-6. DOI: 10.3969/j.issn.1000-565X.2011.02.001 |
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| 作者姓名： | 熊超 姚若河 耿魁伟 |
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| 作者单位： | 华南理工大学,电子与信息学院,广东,广州,510640 |
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| 基金项目： | 国家自然科学基金资助项目，广东省科技攻关项目 |
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| 摘 要： | 为了揭示ZnO/p-Si异质结的导电机理,基于p-n结扩散模型和Anderson扩散模型推导了ZnO/p-Si异质结在理想情况下的伏安特性,并分析了掺杂浓度、工作温度以及能带补偿的影响.结果表明:当正向偏压超过势垒高度时,界面两边多数载流子由耗尽变为堆积,形成反向势垒,对异质结的正向电流起阻碍作用;当外加正向电压等于内...
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| 关 键 词： | 氧化锌 异质结 伏安特性 内建势垒 扩散模型 |
Investigation into Voltage-Current Characteristics of ZnO/p-Si Heterojunction Based on Diffusing Models |
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| Xiong Chao,Yao Ruo-he,Geng Kui-wei. Investigation into Voltage-Current Characteristics of ZnO/p-Si Heterojunction Based on Diffusing Models[J]. Journal of South China University of Technology(Natural Science Edition), 2011, 39(2): 1-6. DOI: 10.3969/j.issn.1000-565X.2011.02.001 |
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| Authors: | Xiong Chao Yao Ruo-he Geng Kui-wei |
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| Affiliation: | Xiong Chao Yao Ruo-he Geng Kui-wei(School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China) |
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| Abstract: | In order to reveal the conduction mechanism of ZnO/p-Si heterojunction,the voltage-current characteristics of the heterojunction in ideal conditions are investigated based on the p-n junction diffusing model and the Anderson diffusing model,and the effects of doping concentration,working temperature and band compensation on the voltage-current characteristics are analyzed.The results indicate that(1) when the forward bias exceeds the built-in potential,the state of most carriers at the two sides of the inte... |
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| Keywords: | zinc oxide heterojunction voltage-current characteristic built-in potential barrier diffusing model |
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