| 镶嵌结构锗纳米晶电输运的研究 |
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| 引用本文： | 张盛华,卢铁城,敦少博,胡强,赵建君,何捷. 镶嵌结构锗纳米晶电输运的研究[J]. 四川大学学报(自然科学版), 2006, 43(3): 622-626 |
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| 作者姓名： | 张盛华 卢铁城 敦少博 胡强 赵建君 何捷 |
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| 作者单位： | 桂林医学院物理教研室,广西,桂林,541004;四川大学物理系·辐射物理及技术教育部重点实验室,成都,610064;四川大学物理系·辐射物理及技术教育部重点实验室,成都,610064 |
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| 摘 要： | 利用离子注入然后退火的方法制备了镶嵌有锗纳米晶的二氧化硅复合薄膜,从拉曼散射和透射电镜测量了解到薄膜中镶嵌有5~7nm大小的锗纳米晶层.研究了锗纳米晶层在常温和低温下的电输运性质.结果表明:锗纳米晶在100K~300K温度范围内符合莫特变程跳跃电导(VRH)导电,100K以下的低温电导基本上是一常数,导电主要是电子在相邻纳米晶之间的直接跃迁;经退火可消除离子注入引入的缺陷,能增加薄膜的电导;对由3×1017cm-2注量锗离子注入制备的薄膜观察到半导体向金属导电的转变.
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| 关 键 词： | 锗纳米晶 电输运 低温电导 |
| 文章编号： | 0490-6756（2006）03-0622-05 |
| 收稿时间： | 2006-03-25 |
| 修稿时间： | 2006-03-25 |
Electron-Transport Properties of Ge Nanocrystals Embedded Structure |
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| ZHANG Sheng-hua,LU Tie-cheng,DUN Shao-bo,HU Qiang,ZHAO Jian-jun,HE Jie. Electron-Transport Properties of Ge Nanocrystals Embedded Structure[J]. Journal of Sichuan University (Natural Science Edition), 2006, 43(3): 622-626 |
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| Authors: | ZHANG Sheng-hua LU Tie-cheng DUN Shao-bo HU Qiang ZHAO Jian-jun HE Jie |
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| Affiliation: | Physical Stuff Room; Guilin Medical College; China;Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University,Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University,Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University,Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University,Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University,Department of Physics·Key Laboratory for Irradiation Physics and Technologyof Ministry of Education; Sichuan University |
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| Abstract: | |
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| Keywords: | Ge nanocrystals electron transport low temperature conductivity |
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