| 气相生长统一模型 |
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| 引用本文： | 王敬义,王宇,赵宁,何笑明.气相生长统一模型[J].华中科技大学学报(自然科学版),1993(5). |
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| 作者姓名： | 王敬义 王宇 赵宁 何笑明 |
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| 作者单位： | 华中理工大学固体电子学系
(王敬义，王宇，赵宁)，华中理工大学固体电子学系(何笑明) |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 从微观输运与化学反应动力学出发,将薄膜气相生长过程划分为五个步骤,基于对步骤的分析,得到了淀积过程的共同规律,建立了气相淀积生长速率的统一模型.代入有关参数和少数实验数据即可得到具体的实用模型.文中揭示的薄膜生长规律对于优选工艺方法和具体工艺参数具有参考意义.
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| 关 键 词： | 薄膜生长 生长速率 统一模型 |
A Unified Model for Vapor Growth |
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| Wang Jingyi Wang Yu Zhao Ning He Xiaoming.A Unified Model for Vapor Growth[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1993(5). |
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| Authors: | Wang Jingyi Wang Yu Zhao Ning He Xiaoming |
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| Institution: | Wang Jingyi Wang Yu Zhao Ning He Xiaoming |
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| Abstract: | Vapor deposition is the main method for preparing thin films. Based on an analysis of the stages of a growth process, the common law of depositing processes has been obtained and a unified model for the growth rate of vapor deposition is also developed. With the relevant parameters and a few experimental data, the specific model for a specific technique can be derived. |
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| Keywords: | thin film preparation growth rate unified model |
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