| MgB2薄膜金属-绝缘体转变的研究 |
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| 引用本文： | 李彦炜,孙爱民,朱海滨,陈团结,艾德臻.MgB2薄膜金属-绝缘体转变的研究[J].西北师范大学学报,2007,43(1):50-53,90. |
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| 作者姓名： | 李彦炜 孙爱民 朱海滨 陈团结 艾德臻 |
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| 作者单位： | 西北师范大学物理与电子工程学院,甘肃兰州730070 |
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| 摘 要： | 采用射频磁控溅射方法，在Si＼MgO衬底上制备了MgB2薄膜，通过X射线衍射图分析了不同退火温度对薄膜结构性质的影响；用直流四探针法对其阻温特性进行了研究．结果表明，由于膜中多种成分的相互渗透，造成了低温下电子的相互关联，导致薄膜的阻温特性在175．9K时发生了金属-绝缘转变．在Mott模型和Anderson模型下对此现象进行了解释．
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| 关 键 词： | 磁控溅射 MgB2薄膜 Mott模型 Anderson模型 |
| 文章编号： | 1001-988X（2007）01-0050-04 |
| 修稿时间： | 2006-05-262006-12-08 |
Study on MgB2 thin film's metal-insulator transitions |
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| LI Yan-wei,SUN Ai-min,ZHU Hai-bin,CHEN Tuan-jie,AI De-zhen.Study on MgB2 thin film''''s metal-insulator transitions[J].Journal of Northwest Normal University Natural Science (Bimonthly),2007,43(1):50-53,90. |
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| Authors: | LI Yan-wei SUN Ai-min ZHU Hai-bin CHEN Tuan-jie AI De-zhen |
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| Institution: | College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, Gansu, China |
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| Abstract: | The MgB_2 thin films have been successfully fabricated on the Si/MgO substrates with RF magnetron sputtering method.The influence of different annealing temperature on films' properties is analyzed with X-ray diffraction pattern.The characteristic of resistance-temperature is studied with the method of direct current four probe.The results show that the correlation of electrons leads to metal-insulator transitions at 175.9 K.The phenomenon is explained well with Mott-model and Anderson-model. |
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| Keywords: | XRD |
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