| 78K红外吸收法测定硅中氧含量 |
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| 引用本文： | 李月珍,沈金媛,任宁,王其闵.78K红外吸收法测定硅中氧含量[J].应用科学学报,1985,3(2):184-185. |
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| 作者姓名： | 李月珍 沈金媛 任宁 王其闵 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 硅中氧含量的测定是评价硅单晶质量的重要参数之一.用外红吸收法测定硅单晶中的氧含量已有许多报道1~5].我们曾建立了300K 9μm红外吸收法测氧标定曲线6],低温可提高检测灵敏度7~10],因此本工作主要是建立较精确的78K红外测氧标定曲线.
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| 收稿时间： | 1982-09-01 |
| 修稿时间： | 1984-04-25 |
78 K INFRARED ABSORPTION METHOD FOR MEASURING THE OXYGEN CONTENT IN SILICON |
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| LI YUEZHEN,SHEN JINYUAN,REN NING,WANG QIMIN.78 K INFRARED ABSORPTION METHOD FOR MEASURING THE OXYGEN CONTENT IN SILICON[J].Journal of Applied Sciences,1985,3(2):184-185. |
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| Authors: | LI YUEZHEN SHEN JINYUAN REN NING WANG QIMIN |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | A more accurate calibration curve at 78K for measuring the oxygen content in silicon single crystals has been established by the infrared absorption difference method. The resulting formula is N0=2.6α ppmA, or N0=1.3×1017α atoms/cm3 where α represents the IR absorption coefficient. |
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