衬底温度和溅射功率对AZO薄膜性能的影响

采用RF磁控溅射法在载玻片上制备了可用于电极材料的掺Al氧化锌(AZO)透明导电薄膜,并对不同衬底温度和溅射功率下制备的AZO薄膜结构、光电性能进行了表征分析.结果表明:各种工艺条件下沉积的AZO薄膜均具有明显的(002)择优取向,没有改变ZnO六方纤锌矿结构;薄膜电阻率随衬底温度升高而减小,随溅射功率增加先减小后增大,衬底温度400℃、溅射功率200W时最小,为1.53×10-5Ω.m;可见光平均透射率均在80%以上,光学带隙与载流子浓度变化趋势一致,最大值为3.52eV.

Effects of substrate temperature and sputtering power on properties of AZO films

Al-doped ZnO(AZO)transparent conductive films for electrode materials were prepared on glass slides by RF magnetron sputtering method.Structural,optical,and electrical properties of the films deposited under different substrate temperatures and sputtering power were characterized and analyzed.The results show that films deposited under various conditions have obvious(002) preferred orientation without changing the hexagonal wurtzite structure.The resistivity of the films decreases with increase of the substrate temperature and decreases first and then increases with promoting of the sputtering power.When the substrate temperature is 400 ℃ and the sputtering power is 200 W,the resistivity is minimum of 1.53×10-5 Ω·m.The average visible transmittance of all is above 80%,and the optical band gap has the same variation trend with the carrier concentration,maximum of 3.52 eV.