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环境噪声抑制的红外接近传感器设计
引用本文:史凌峰,刘玉芳,何惠森,赵永瑞. 环境噪声抑制的红外接近传感器设计[J]. 华中科技大学学报(自然科学版), 2012, 40(2): 71-76
作者姓名:史凌峰  刘玉芳  何惠森  赵永瑞
作者单位:西安电子科技大学电路设计CAD研究所/超高速电路设计与电磁兼容教育部重点实验室,陕西西安,710071
基金项目:国家自然科学基金资助项目,西安电子科技大学超高速电路设计与电磁兼容教育部重点实验室资助项目
摘    要:分析红外接近传感器的工作原理,针对红外接近传感器容易受到环境噪声影响而发生检测错误的问题,提出一种高效的环境噪声抑制方法.该方法通过光学镀膜滤波和基于时序控制的数字模拟混合减法电路,分步滤除环境噪声,达到准确接近检测目标的目的.设计了相关传感器电路,可以在太阳光或灯光光照度低于4000lx,温度低于85℃的环境下,实现25cm范围内的物体接近程度的准确测定.在相同工艺下,通过Spec-tre进行仿真,结果表明:该传感器在给定的噪声环境中工作与无环境噪声的理想情况相比,最大误差不超过1%.所设计电路已在0.35μm3VCMOS工艺下投片验证,结果满足设计指标.

关 键 词:数字接近传感器  光电二极管  红外  环境噪声抑制  光学镀膜滤波  数模混合减法电路

Design of an infrared proximity sensor with environment noise suppression
Shi Lingfeng Liu Yufang He Huisen Zhao Yongrui. Design of an infrared proximity sensor with environment noise suppression[J]. JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE, 2012, 40(2): 71-76
Authors:Shi Lingfeng Liu Yufang He Huisen Zhao Yongrui
Affiliation:Shi Lingfeng Liu Yufang He Huisen Zhao Yongrui(a Institute of Electronic CAD;b Key Laboratory of High-Speed Circuit Design and EMC of Ministry of Education,Xidian University,Xi′an 710071,China)
Abstract:Fundamentals of infrared proximity sensor was proposed.The infrared proximity sensor cannot sense proximity correctly with the effect of environment noise,such as the interference of sunlight,light and temperature change.A kind of highly effective method of environment noise suppression was proposed based on the problem,which employed optical filming filter and sequential controlling digital-analog mixed subtraction circuit to remove environment noise step by step,achieving the purpose of accurate proximity sensing.Moreover,the sensor circuit was designed,which could sense the proximity of object at a distance up to 25 cm away from the sensor under the environment of the sunlight or the light illumination lower than 4 000 lx and temperature lower than 85 ℃.The designed circuit was verified by Spectre simulation in the same process.The simulation results show that under the given noise environment the sense error is less than 1%.The designed structure is implemented in 0.35 μm 3 V CMOS process.
Keywords:digital proximity sensor  photodiode (PD)  infrared  environment noise suppression  op-tical filming filter  digital-analog mixed subtraction circuit
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