An overview of resistive random access memory devices |
| |
| Authors: | LI YingTao LONG ShiBing LIU Qi Lü HangBing LIU Su & LIU Ming |
| |
| Affiliation: | LI YingTao 1,2,LONG ShiBing 2,LIU Qi 2,Lü HangBing 2,LIU Su 1 & LIU Ming 2* 1 School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China,2 Laboratory of Nano-Fabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029 |
| |
| Abstract: | With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emi... |
| |
| Keywords: | resistive random access memory resistive switching performance parameters |
| 本文献已被 CNKI 等数据库收录！ |
|
