| 半导体金属氧化物的室温固相合成研究 |
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| 引用本文： | 徐甲强,刘艳丽,牛新书. 半导体金属氧化物的室温固相合成研究[J]. 贵州大学学报(自然科学版), 2001, 18(3): 196-198 |
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| 作者姓名： | 徐甲强 刘艳丽 牛新书 |
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| 作者单位： | 1. 郑州轻工业学院化学工程系,
2. 河南师范大学化学与环境科学学院, |
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| 摘 要： | 以无机盐为原料，用室温固相化学反应直接合成了SnO2、In2O3、ZnO、Fe2O3等导体金属氧化物的纳米粉体，用X－射线衍射技术和透射电子显微镜对产物的物相和形貌进行了表征观察，结果表明，固相化学反应完全，所得产物为理论产物，且均为纳米粒子。
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| 关 键 词： | 半导体 金属氧化物 室温 固相化学反应 合成 纳米材料 |
| 文章编号： | 1000-5269(2001)03-0196-03 |
| 修稿时间： | 2001-03-10 |
Study on Semiconductor Oxides Prepared by Solid State Reaction at Room Temperature |
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| Xu Jiaqiang Liu Yanli Niu Xinshu. Study on Semiconductor Oxides Prepared by Solid State Reaction at Room Temperature[J]. Journal of Guizhou University(Natural Science), 2001, 18(3): 196-198 |
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| Authors: | Xu Jiaqiang Liu Yanli Niu Xinshu |
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| Affiliation: | Xu Jiaqiang 1* Liu Yanli 2 Niu Xinshu 2 |
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| Abstract: | N-type semiconductoring nanometer oxides including SnO 2?In 2O 3?ZnO?Fe 2O 3 were prepared by solid state reaction of inorganic compound at room temperature.The crystal structure and microstructure of the powders were studied by XRD and TEM.The results show that solid state reaction at room temperature are feasible and reasonable and the mean grain sizes are below 100 nm. |
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| Keywords: | semiconductor metal oxides room temperature solid state reaction. |
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