单根In掺杂的n-ZnO纳米线/p+-Si异质结的紫外电致发光

采用化学气相沉积的方法在In_0.1Ga_0.9N衬底上生长出In掺杂的n-ZnO纳米线阵列。电学输运测量得到单根n-ZnO纳米线的电阻率为0.001 Ω cm，比同样方法在GaN衬底上生长的ZnO纳米线低约20倍。这个结果表明来自于In_0.1Ga_0.9N衬底中的In原子在高温生长过程中可能被掺入ZnO纳米线。制备成功单根n-ZnO纳米线/p⁺-Si异质结构并研究了其电致发光特性。室温下电致发光光谱中可以看到一个窄的ZnO激子峰（约380 nm）和一个中心位于700 nm 的来自Si衬底表面自然氧化硅发光中心的发光峰。

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p+-Si Heterostructures

The In doped n-ZnO nanowires (NWs) arrays were grown on In_0.1Ga_0.9N substrates via the chemical vapor deposition method.The electrical transport measurements on single n-ZnO NWs show that they have a resistivity (0.001 Ω cm) about 20 times lower than that of the n-ZnO NWs grown on GaN substrates via the same method.This result indicates that indium atoms from the In_0.1Ga_0.9N substrate may be doped into the ZnO NWs during the high-temperature synthesis process.The n-ZnO single NW (SNW)/p⁺-Si heterojunctions were fabricated and their electroluminescence properties were studied.The room-temperature electroluminescence spectra show a narrow 380 nm excitonic peak from ZnO SNW,and a broad emission band centeres at 700 nm,which originates from the luminescent centers located in the native SiO_x layer on the p+-Si substrate.