Nd掺杂对ZnO带隙及染料敏化太阳能电池光电性能的影响

利用溶液法制备Nd掺杂ZnO,并通过X射线衍射(XRD)、紫外-可见吸收光谱(UV-Vis)和光电流密度-光电压曲线研究Nd掺杂对ZnO带隙及染料敏化太阳能电池光电性能的影响.结果表明:Nd原子取代Zn原子掺杂到ZnO晶格中;Nd掺杂使ZnO带隙窄化,导致其UV-Vis谱吸收带边红移,且随着掺杂摩尔分数的增加,红移和窄化程度增大;掺杂Nd可提高电池的光电流及光电转换效率,当掺杂Nd的摩尔分数分别为0.5%,1.0%,1.5%时,其光电流密度分别为9.51,13.01,10.79mA/cm2,光电转换效率分别为2.28%,2.84%,2.48%.

Influence of Nd Doping on Band Gap and Photovoltaic Performances of Dye-Sensitized Solar Cell Based on ZnO

Nd doped ZnO was prepared by a simple solution method.X ray diffraction analysis (XRD) demonstrates that Nd atoms have been successfully incorporated into the lattice of ZnO. UV Visible absorption spectra (UV Vis) show that Nd doping has led to a red shift of the absorption edge of ZnO to
the visible light region, which shows Nd doping has narrowed the band gap of ZnO. Nd doping obviously improves the short circuit photocurrent density and overall light conversion efficiency of dye sensitized solar cell based on ZnO photoanode. When doping concentrations of Nd were 0.5%,10%, and 1.5% respectively, short circuit photocurrent densities were 9.51,13.01,1079 mA/cm2 respectively,and overall light conversion efficiencies were 2.28%,2.84%, and 2.48% respectively.