| Pb2+掺杂对Cd1-xZnxS光催化产氢性能的影响规律 |
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| 引用本文： | 邢婵娟,郭烈锦. Pb2+掺杂对Cd1-xZnxS光催化产氢性能的影响规律[J]. 西安交通大学学报, 2008, 42(1): 110-113 |
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| 作者姓名： | 邢婵娟 郭烈锦 |
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| 作者单位： | 西安交通大学动力工程多相流国家重点实验室,710049,西安 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 采用共沉淀法制备了Pb2 掺杂的Cd0.2Zn0.8S及Cd0.8Zn0.2S固溶体光催化剂.实验结果表明,Pb2 掺杂的宽带隙固溶体Cd0.2Zn0.8S在6s轨道与固溶体的价带杂化后提升了价带位置,降低了半导体的带隙,因而提高了产氢活性.当Pb2 掺杂窄带隙固溶体Cd0.8Zn0.2 S后,形成固溶体价带附近的杂质能级,并成为光生电子空穴复合中心,因而不能提高产氢性能.因此,Pb2 对半导体的可见光改性仅适用于较宽带隙的半导体.
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| 关 键 词： | 固溶体 光催化剂 产氢 掺杂 光催化剂 产氢性能 影响 规律 Effect Activity Water Splitting Photocatalytic Solid Solution Band Gap 改性 可见光 复合中心 电子空穴 杂质能级 窄带隙 产氢活性 半导体 位置 |
| 文章编号： | 0253-987X（2008）01-0110-04 |
| 收稿时间： | 2007-08-01 |
| 修稿时间： | 2007-08-01 |
Effect of Pb2+ Doping on Band Gap of Cd1-xZnxS Solid Solution and Photocatalytic Water Splitting Activity |
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| XING Chanjuan,GUO Liejin. Effect of Pb2+ Doping on Band Gap of Cd1-xZnxS Solid Solution and Photocatalytic Water Splitting Activity[J]. Journal of Xi'an Jiaotong University, 2008, 42(1): 110-113 |
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| Authors: | XING Chanjuan GUO Liejin |
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| Abstract: | Pb2 doped Cd0.2Zn0.8S and Cd0.8Zn0.2S were prepared with coprecipitation method.The results indicate that the valence band of Cd0.2Zn0.8S solid solution with wide band gap is heightened by the Pb 6s level hybridization with valence band,and the photocatalytical hydrogen evolution ability is improved.When Pb2 is doped in Cd0.8Zn0.2S solid solution with narrow band gap, it acts as a recombination center and is unable to improve water splitting activity of the catalyst.So the doping of Pb2 is effective only for the semiconductor with wide band gap. |
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| Keywords: | solid solution photocatalyst hydrogen production |
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