首页 | 本学科首页   官方微博 | 高级检索  
     检索      

正常金属/绝缘层/s波超导隧道结中的隧道谱
引用本文:魏健文.正常金属/绝缘层/s波超导隧道结中的隧道谱[J].华中师范大学学报(自然科学版),2004,38(3):297-300.
作者姓名:魏健文
作者单位:淮阴师范学院,物理系,江苏,淮安,223001
基金项目:江苏省教委自然科学基金资助课题(00KJD140003).
摘    要:以方势垒描述绝缘层,考虑正常金属区域的杂质散射,运用Bogoliubov-deGennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论,对正常金属/绝缘层/s波超导隧道结(NIS结)中的隧道谱作进一步研究.研究表明:(1)在U0>EF的情况下,微分电导随绝缘层宽度的增加而衰减,偏压不同,衰减的程度不同;(2)衰减能压低能隙电导峰;(3)较小的杂质散射即能在隧道谱的零偏压凹陷峰中感应出一小峰.

关 键 词:NIS结  方势垒  隧道谱
文章编号:1000-1190(2004)03-0297-04

Tunneling spectrum in the normal metal/insulating layer/s-wave superconductor tunnel junctions
WEI Jian-wen.Tunneling spectrum in the normal metal/insulating layer/s-wave superconductor tunnel junctions[J].Journal of Central China Normal University(Natural Sciences),2004,38(3):297-300.
Authors:WEI Jian-wen
Abstract:Taking into account the impurities scattering in the normal metal region, using square-potential barrier to describe the insulating layer, we study further the tunneling spectrum of the normal metal/insulating layer/s-wave superconductor tunnel junctions making use of Bogoliubov-de Gennes(BdG) equation and Blonder-Tinkham-Klapwijk(BTK) theory. It is found that: (1) The change of the differential conductance with insulating layer width takes the form of attenuation when U_0>E_F, and the degree of attenuation is different under different bias; (2) The attenuation can abate the conductance peak at the energy gap; (3) The zero-bias conductance dip of the tunneling spectrum can be induced a small peak by a little impurities scattering.
Keywords:NIS junctions  square-potential barrier  tunneling spectrum
本文献已被 CNKI 万方数据 等数据库收录!
点击此处可从《华中师范大学学报(自然科学版)》浏览原始摘要信息
点击此处可从《华中师范大学学报(自然科学版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号