| 电子束蒸发 WO_3-基气敏薄膜特性的研究 |
| |
| 引用本文： | 丘思畴,陈涛,吴正华,黄汉尧.电子束蒸发 WO_3-基气敏薄膜特性的研究[J].华中科技大学学报(自然科学版),1998(3). |
| |
| 作者姓名： | 丘思畴 陈涛 吴正华 黄汉尧 |
| |
| 作者单位： | 华中理工大学电子科学与技术系 |
| |
| 摘 要： | 介绍了用电子束蒸发制作ＷＯ３气敏薄膜、溅射掺Ａｕ、膜的热处理工艺以及对Ｈ２Ｓ气体的敏感特性测量的初步结果．着重讨论了ＷＯ３膜的稳定化过程．
|
| 关 键 词： | 金属氧化物半导体 气敏元件 电子束蒸发 WO_3薄膜 |
The Properties of WO 3 Based Gas Sensitive Films Prepared by Electron Beam Evaporation |
| |
| Qiu Sichou Prof., Dept. of Electronics Sci.& Tech.,HUST,Wuhan ,China. Chen Tao Wu Zhenghua Huang Hanyao.The Properties of WO 3 Based Gas Sensitive Films Prepared by Electron Beam Evaporation[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1998(3). |
| |
| Authors: | Qiu Sichou Prof Dept of Electronics Sci& Tech HUST Wuhan China Chen Tao Wu Zhenghua Huang Hanyao |
| |
| Institution: | Qiu Sichou Prof., Dept. of Electronics Sci.& Tech.,HUST,Wuhan 430074,China. Chen Tao Wu Zhenghua Huang Hanyao |
| |
| Abstract: | The WO 3 based gas sensitive films were prepared by electron beam evaporation. The D.C. sputtering technology used to dope Au, the heat treatment of the films, and preliminary test results of the sensitivity characteristic of H 2S gas are described. The process of stabilization of the structure and the composition of films is discussed. |
| |
| Keywords: | metal oxide semiconductors gas sensors WO 3 based films electron beam evaporation |
| 本文献已被 CNKI 等数据库收录！ |
