| 高效率宽输入范围电荷泵2倍压电路的设计 |
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| 引用本文： | 代国定,刘世伟,杨向一,韩辉.高效率宽输入范围电荷泵2倍压电路的设计[J].华中科技大学学报(自然科学版),2011(3):83-86. |
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| 作者姓名： | 代国定 刘世伟 杨向一 韩辉 |
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| 作者单位： | 西安电子科技大学电路CAD研究所;西安电子科技大学超高速电路设计与电磁兼容教育部重点实验室; |
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| 基金项目： | 国家部委预研基金资助项目(9140A08010208DZ0123) |
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| 摘 要： | 提出一种无阈值损耗的电荷泵倍压电路(2倍压电路),该电路采用衬底可变单元代替二极管连接的MOS管,消除了MOS器件的体效应及阈值损耗的影响,与传统电荷泵相比效率提高了20%,获得低至1.0V的宽输入范围.基于该结构采用TSMC 0.25μm BCD工艺设计了一款2.0AUSB功率开关芯片,使用spec-tre对整体电路进行了仿真验证,结果表明:该电荷泵电路的工作状态良好,同比输出电压提高了1.0V,效率最高可达90%,基于该工艺实现的电荷泵电路的版图面积仅为0.04mm2.
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| 关 键 词： | 电荷泵 倍压电路 阈值损耗 USB功率开关 体效应 |
Design of high efficiency voltage doubler charge pump circuit with wide input range |
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| Dai Guodinga,b Liu Shiweia Yang Xiangyia Han Huia.Design of high efficiency voltage doubler charge pump circuit with wide input range[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,2011(3):83-86. |
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| Authors: | Dai Guodinga b Liu Shiweia Yang Xiangyia Han Huia |
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| Institution: | a(a Institute of Electronic CAD;b Key Laboratory of High-Speed Circuit Design and EMC,Ministry of Education,Xidian University,Xi′an 710071,China) |
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| Abstract: | A novel charge pump voltage doubler without threshold loss was presented.The body effect and threshold loss existing in MOS(metal oxide semiconductor) device were eliminated by the proposed circuit through the means of substituting a type of substrate variable unit for the diode-connected MOSFET(metal oxide semiconductor field effect transistor) in conventional charge pump.Compared with the traditional charge pump,the efficiency of the charge pump was improved by 20%,and the input voltage could be low to 1.... |
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| Keywords: | charge pump voltage doubler circuit threshold loss USB(universal serial bus) power switch body effect |
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